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Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
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low gate charge mosfet power electronics

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low gate charge mosfet power electronics

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...MOSFET Power Electronics Transistor for High-Current Switching Applications Single N-Channel 25 V, 73 A Technology MOSFET (Metal Oxide) Drain to ... 2024-12-09 22:29:06
...MOSFET Power Electronics 8-PowerTDFN Package N-Channel Enhancement Mode Resistance Dissipation FET Type N-Channel Technology MOSFET (Metal Oxide) ... 2024-12-09 22:29:06
... Rds On (Max) @ Id, Vgs 94mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V Vgs (Max) ±30V Input Capacitanc... 2024-12-09 22:29:06
... Rds On) 10V Rds On (Max) @ Id, Vgs 265mOhm @ 9A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V Vgs (Max) ±30V Input ... 2024-12-09 22:29:06
... Rds On) 10V Rds On (Max) @ Id, Vgs 11mOhm @ 92A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V Vgs (Max) ±20V Input ... 2024-12-09 22:29:06
...MOSFET Power Electronics Dual N-Channel Enhancement Mode Field Effect Transistor 20V 2A TO-236-3 Package FET Type P-Channel Technology MOSFET ... 2024-12-09 22:29:06
...MOSFET Power Electronics TO-252-3 Switching Transistor High Current High Voltage Applications FET Type N-Channel Technology MOSFET (Metal Oxide) ... 2024-12-09 22:29:06
... On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.8mOhm @ 18A, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.2 nC @ 10 V Vgs (Max) ±20V ... 2024-12-09 22:29:06
... Rds On) 10V Rds On (Max) @ Id, Vgs 1.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V Vgs (Max) ±20V ... 2024-12-09 22:29:06
...MOSFET Power Electronics TO-220-3 Package Voltage High Current Applications N-Channel FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to ... 2024-12-09 22:29:06
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