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low gate charge mosfet power electronics
Selling leads
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...package; reinforced with a copper clip -High temperature operation; up to 175°C Applications: -DC-DC converters -Power supplies -Motor control -LED ...
2024-12-09 22:29:06
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...MOSFET Power Electronics - High Performance Low Loss Power Switching Solution for Industrial Applications Drain to Source Voltage (Vdss) 800 V ...
2024-12-09 22:29:06
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...MOSFET Power Electronics: High Power Low Loss High Efficiency Switching Solutions Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain ...
2024-12-09 22:29:06
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... Specifications: - Drain Source Voltage (VDS): -100V - Drain Current (ID): -11A - Gate Threshold Voltage (VGS): -3V - Maximum Power Dissipation (PD...
2024-12-09 22:28:51
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Product Description: 1. High current carrying capacity with low on-resistance. 2. Low gate charge for fast switching. 3. Low input capacitance and ...
2024-12-09 22:28:51
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... Charge): 30 nC Qgs (Gate-Source Charge): 6 nC Qgd (Gate-Drain Charge): 24 nC Ciss (Input Capacitance): 4500 pF Coss (Output Capacitance): 1000 pF ...
2024-12-09 22:28:51
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... On (Max) @ Id, Vgs 81mOhm @ 17A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V Vgs (Max) ±20V Input Capacitance ...
2024-12-09 22:29:06
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...MOSFET Power Electronics SC-75 SMD High Performance Voltage Gate Charge RDS Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to ...
2024-12-09 22:29:06
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...MOSFET Power Electronics Product Specifications • Transistor Polarity: N-Channel • Maximum Drain Source Voltage: 40V • Maximum Gate Source Voltage: ...
2024-12-09 22:29:06
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...: -VDSS: 30 V -RDS(ON): 2.1 mΩ (max) -Qg: 4.7 nC (max) -VGS: ±20 V -Input Capacitance (Ciss): 740 pF (typ) -Power Dissipation (PD): 1.1 W (max) ...
2024-12-09 22:28:51
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