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low gate charge mosfet power electronics
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...MOSFET Power Electronics Product Features: - Low On-Resistance: RDS(on) = 2.7 mΩ (Typ.) @ VGS = 4.5 V - Low Gate Charge: Qg(total) = 3.2 nC (Typ.) ...
2024-12-09 22:29:06
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...MOSFET: Features: - P-Channel Enhancement Mode - Logic Level Gate - Fast Switching - Low Gate Charge - Improved Gate, Avalanche and Dynamic dV/dt - ...
2024-12-09 22:29:06
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... and low gate charge for superior performance. The device is rated for a breakdown voltage of 200V, a drain-source voltage of 100V, and a drain ...
2024-12-09 22:29:06
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...: 1 Drain-Source Voltage (Vdss): 100 V Continuous Drain Current (Id): 4.5 A Rds On (Max) @ Id, Vgs: 2.4 mOhms @ 1.2 A, 10 V Gate Charge (Qg) @ Vgs: ...
2024-12-09 22:28:51
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...MOSFET Power Electronics for Maximum Efficiency Description: This is an N-Channel MOSFET with a drain-source voltage of 200V and a drain current of ...
2024-12-09 22:28:51
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...MOSFET Power Electronics High-Performance Low-Voltage Switching Solutions for Your Electronic Applications FET Type N-Channel Technology MOSFET ...
2024-12-09 22:29:06
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...MOSFET Features: • Low on-resistance • High power dissipation • Low gate charge • Fast switching speed • Avalanche rated • RoHS Compliant Absolute ...
2024-12-09 22:28:51
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...MOSFET Product Features: • 60A, 100V, RDS(on) = 2mΩ • Low Gate Charge (Qg) • Fast Switching Speed • Low On-Resistance • High Current Handling • ...
2024-12-09 22:28:51
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...Power MOSFET Product Description: The IRFP264PBF Power MOSFET is a high performance, high voltage N-Channel MOSFET with a maximum drain-source ...
2024-12-09 22:28:51
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... On) 6V, 10V Rds On (Max) @ Id, Vgs 295mOhm @ 4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V Vgs (Max) ±20V Input ...
2024-12-09 22:29:06
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