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high reliability high power rf transistor
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Product descripition: 1. IRFR2407TRPBF is a MOSFET power transistor with a low on-resistance of 24A. 2. It has a breakdown voltage of 500V and a drain...
2024-12-09 22:28:51
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IRLML5103TRPBF MOSFET Power Electronics High Performance Low Voltage Single N Channel Logic Level Gate FET IRLML5103TRPBF MOSFET N-Channel 20V 4.2A ...
2024-12-09 22:28:51
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Product Listing: IRFP360PBF Power MOSFET Features: • High Input Impedance • Fast Switching Speed • Low On-Resistance • Low Gate Threshold Voltage • ...
2024-12-09 22:29:06
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Product Listing: IRF4104SPBF Power MOSFET Features: • Maximum Drain Source Voltage (Vdss): 100V • Rds (on): 0.070 Ohms • Continuous Drain Current: 30A ...
2024-12-09 22:29:06
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Product Listing: FQB34P10TM – N-Channel MOSFET Power Electronics Parameters: • VDSS: 30V • ID: 34A • RDS(on): 0.065Ω • Package: TO-220 • Type: N...
2024-12-09 22:29:06
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Product Listing: FDMS86540 - N-Channel Power MOSFET Features: • 8.0A, 40V RDS(ON) • Low gate charge • Low Crss • Temperature Compensated Current Limit ...
2024-12-09 22:29:06
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...high-performance, low-cost RF Transceiver designed for use in various applications including wireless sensor networks, AMR, and industrial ...
2024-12-09 22:30:19
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..., and 0.119 Ohm RDS(on) • High-Speed Switching • Fast Intrinsic Diode • Low Input and Output Capacitance • RoHS Compliant • Halogen and Antimony ...
2024-12-09 22:28:51
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Fairchild BSC054N04NSG MOSFET Power Electronics High Performance and Reliable Solutions Product Name: BSC054N04NSG N-Channel MOSFET Function: This N...
2024-12-09 22:29:06
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...High Thermal Stability • Excellent Avalanche Energy Capability Specifications: • Maximum Drain-Source Voltage (VDS): 55V • Maximum Gate-...
2024-12-09 22:29:06
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