China Semiconductor IC Chip manufacturer
Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
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high performance rf power transistors

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high performance rf power transistors

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...Power Electronics High Performance Durable Design for Your Application Product Type: MOSFET Part Number: IRF540NSTRLPBF Package Type: TO-220 ... 2024-12-09 22:28:51
...High Performance N-Channel MOSFET for Power Electronics Applications Product Features: -60V Drain-Source Breakdown Voltage -Typical Output ... 2024-12-09 22:28:51
IRF7503TRPBF MOSFET Power Electronics for High Performance Applications Product Description The IRF7503TRPBF is a N-Channel Power MOSFET designed for ... 2024-12-09 22:29:06
BSC016N06NS MOSFET Power Electronics High-Performance and Reliable Switching Solution Product Name: BSC016N06NS N-Channel MOSFET Product Parameters: • ... 2024-12-09 22:29:06
...: 0.4A (Tc = 25°C) • Gate-Source Voltage: ±20V • Power Dissipation: 1.2W (Tc = 25°C) • Operating Temperature: -55°C to +150°C • Mounting Type: ... 2024-12-09 22:29:06
...Power Electronics High Performance and Reliable Switching Solutions Features: • N-Channel • Logic Level Gate • 100V • 8.7A, 11.8A • Surface Mount • ... 2024-12-09 22:29:06
...Power Electronics SC-75 High Performance Switching Solution FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V ... 2024-12-09 22:29:06
... nC @ 20 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3790 pF @ 25 V FET Feature - Power Dissipation (Max) 310W (Tc) 2024-12-09 22:29:06
...Power Electronics MMBF170 High-Performance Low-Voltage Switching for Heavy-Duty Applications FET Type N-Channel Technology MOSFET (Metal Oxide) ... 2024-12-09 22:29:06
... @ 100µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 25V Power - Max 21W Operating Temperature -55°C 2024-12-09 22:29:06
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