China Semiconductor IC Chip manufacturer
Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
3
Home > Products >

high performance rf power transistors

1111 - 1120 of 3338

high performance rf power transistors

Selling leads
BSC010N04LS MOSFET Power Electronics High Performance Low On Resistance Ultra Low Gate Charge Package: TO-252 Drain to Source Voltage (Vdss): 40V Gate ... 2024-12-09 22:28:51
...High Performance Power Electronics for Improved Efficiency Features: - 100V Drain-Source Breakdown Voltage - 175A Continuous Drain Current at 25°C ... 2024-12-09 22:28:51
...Power Electronics for High-Performance Applications Features: • Low on-resistance RDS(on): 7.8mΩ (max) • Fast switching • Low gate charge • 100% ... 2024-12-09 22:28:51
... Charge - Low Input Capacitance - Fast Switching - Lead-Free and RoHS Compliant Application: - Motor Control - Automotive - Switching Power ... 2024-12-09 22:28:51
IRFB3006PBF MOSFET Power Electronics High Performance and Reliability Description: IRFB3006PBF MOSFET is a N-Channel MOSFET with a maximum drain ... 2024-12-09 22:28:51
IRL8113PBF MOSFET Power Electronics High Performance Low Voltage Low On Resistance Switch IRL8113PBF is a MOSFET designed for efficient and reliable ... 2024-12-09 22:28:51
... drain-source voltage and +/-20V gate-source voltage. It has an on-resistance of 0.14 Ohms and is ideal for applications such as motor control, ... 2024-12-09 22:28:51
...High-Performance Power Electronics for Maximum Efficiency and Reliability Features: • Low On-Resistance • Low Gate Charge • Low Threshold • Ease of ... 2024-12-09 22:28:51
SI7430DP-T1-GE3 MOSFET Power Electronics High Performance Low Voltage Small Size Solution Features: • Enhanced channel temperature and power rating ... 2024-12-09 22:28:51
...High-Performance Power Electronics for Maximum Efficiency IRF7759L2TRPBF MOSFET Voltage: 100V Drain to Source Breakdown Voltage: 100V Continuous ... 2024-12-09 22:28:51
Page 112 of 334 :   |< << 108 109 110 111 112 113 114 115 116 >> >|