21 - 30 of 402
cellular rf power transistors
Selling leads
|
..., and excellent ruggedness and reliability. The SI4010-C2-GTR is ideal for use in power amplifiers, switching circuits, and linear amplifiers. ...
2024-12-09 22:29:56
|
|
...RF Power Transistor High Performance Low Noise High Gain HMC536LP2E Power Transistor Product Description: The HMC536LP2E is a GaAs pHEMT MMIC power ...
2024-12-09 22:29:56
|
|
...RF Power Transistor Product Features: - Ideal for RF power amplifier applications - High gain and efficiency - Low drive power - High frequency ...
2024-12-09 22:29:56
|
|
... - Operating Temperature: -40°C to +85°C - Input Impedance: 50 ohms - Package: 4mm x 4mm QFN Product Status Obsolete RF Type General Purpose ...
2024-12-09 22:29:56
|
|
... RF Power Transistor Single-Chip Bluetooth Transceiver and Baseband Processor Package 49-VFBGA Type TxRx + MCU RF Family/Standard Bluetooth ...
2024-12-09 22:29:56
|
|
...B1-FMR RF Power Transistor Product Specifications: • Maximum Frequency: 4GHz • Maximum Output Power: 22.5W • Maximum Gain: 15dB • Maximum Output ...
2024-12-09 22:29:56
|
|
...RF Power Transistor Features: • High gain • Low noise figure • High power output • Broadband performance • Low heat dissipation • No external bias ...
2024-12-09 22:29:56
|
|
... dB at 1 GHz - Wide Bandwidth: > 400 MHz to 4 GHz 3. Applications: - High Power Amplifier - Broadband Power Amplifier - Low Noise Amplifier - ...
2024-12-09 22:29:56
|
|
...RF Power Transistor Product Features: - Wideband operation from 0.1 to 6.0 GHz - High Gain: 15.5 dB at 0.9 GHz - High Output Power: 19.5 dBm at 0.9 ...
2024-12-09 22:29:56
|
|
... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 ...
2024-12-09 22:29:56
|