HMC536LP2E RF Power Transistors High Performance Low Noise High Gain

HMC536LP2E RF Power Transistor High Performance Low Noise High Gain

HMC536LP2E Power Transistor

Product Description:

The HMC536LP2E is a GaAs pHEMT MMIC power amplifier which operates between DC and 6 GHz. This amplifier is designed for applications such as point-to-point radios, point-to-multipoint radios and VSATs.

Features:

• Gain: 14.5 dB
• Power Output: +28 dBm
• P1dB: +26 dBm
• Noise Figure: 3.2 dB
• Drain Efficiency: 20%
• Operating Voltage: +5V
• Input/Output Impedance: 50 ohms
• Operating Temperature: -40°C to +85°C

Why buy from us >>> Fast / Safely / Conveniently

• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.

How to buy >>>

• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.

Service >>>

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• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
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