AD9361BBCZ High Power Rf Transistor

AD9361BBCZ RF Power Transistor - High Power High Reliability

The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF power amplifiers, cellular base stations and other wireless communication applications.

Features:

• High power capability: Pout = 10 W
• High efficiency: up to 60%
• Wide gate voltage range: VGS = -3.5V to -20V
• Excellent thermal stability: R DS(on) maximum variation of 9% over temperature
• Low gate charge: Qg = 5.5nC
• Low thermal resistance: Rthj-c = 1.5°C/W
• RoHS compliant
• Halogen-free package options

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