China Astec Power Supply manufacturer
ShenZhen QingFengYuan Technology Co.,Ltd.
Shenzhen QINGFENGYUAN Technology Co., Ltd. was established in 2013. It is a large-scale professional electronic component distributor with a complete range of products. Products include analog
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ShenZhen QingFengYuan Technology Co.,Ltd.

City: shenzhen

Country/Region:china

Tel:86-180-3344-1064

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Miss.Amy View Contact Details
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diode triode transistor

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PESD1LIN,115 employs an ultra-compact SOD323 (SC-76) package to protect a single automotive Local Interconnect Network (LIN) bus line against electrostatic discharge (ESD).

PESD1LIN,115 employs an ultra-compact SOD323 (SC-76) package to protect a single automotive Local Interconnect Network (LIN) bus line against electrostatic discharge (ESD). for sale
Product Overview The PESD1LIN utilises an ultra-compact SOD323 (SC-76) surface-mount device (SMD) plastic package, designed to safeguard a single ... 2026-02-10 01:03:04

The PESD1IVN24-AX employs a compact SOD323 (SC-76) package to safeguard automotive in-vehicle network bus lines against damage caused by electrostatic discharge (ESD) and other transient phenomena.

The PESD1IVN24-AX employs a compact SOD323 (SC-76) package to safeguard automotive in-vehicle network bus lines against damage caused by electrostatic discharge (ESD) and other transient phenomena. for sale
Product Overview An ESD protection device utilising a compact SOD323 (SC-76) surface-mount device (SMD) plastic package, designed to safeguard ... 2026-02-10 01:02:54

PDTC114ET,215 NPN resistor-equipped transistors (RET) in compact SOT23 surface-mount device (SMD) plastic packages

PDTC114ET,215 NPN resistor-equipped transistors (RET) in compact SOT23 surface-mount device (SMD) plastic packages for sale
Product OverviewNPN resistor-equipped transistor (RET) in a compact SOT23 surface-mount device (SMD) plastic package. PNP complementary counterpart: ... 2026-02-10 01:02:44

NX7002BKR A N-channel enhancement-mode field-effect transistor (FET) employing trench MOSFET technology

NX7002BKR A N-channel enhancement-mode field-effect transistor (FET) employing trench MOSFET technology for sale
Product Overview Dual logic-level N-channel MOSFET employing TrenchMOS technology in an LFPAK56D (dual Power - SO8) package. Designed and certified to ... 2026-02-10 01:02:34

BZX384-B18-QX low-power voltage regulator diode, utilising a compact SOD323 (SC-76) surface-mount device diode

BZX384-B18-QX low-power voltage regulator diode, utilising a compact SOD323 (SC-76) surface-mount device diode for sale
See Details Images-Contact us for send SHENZHEN QINGFENGYUAN TECHNOLOGY CO.,LTD. If you see this description on the product, it proves that the ... 2026-02-10 01:02:23

The BUK9Y29-40E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.

The BUK9Y29-40E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications. for sale
Product Overview Dual logic-level N-channel MOSFET employing TrenchMOS technology in an LFPAK56D (dual Power - SO8) package. Designed and certified to ... 2026-02-10 01:02:13

The BUK9Y25-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.

The BUK9Y25-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications. for sale
Product Overview Dual logic-level N-channel MOSFET employing TrenchMOS technology in an LFPAK56D (dual Power - SO8) package. Designed and certified to ... 2026-02-10 01:02:03

The BUK9Y15-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.

The BUK9Y15-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications. for sale
Product Overview Dual logic-level N-channel MOSFET employing TrenchMOS technology in an LFPAK56D (dual Power - SO8) package. Designed and certified to ... 2026-02-10 01:01:54

The BUK9K52-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.

The BUK9K52-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications. for sale
Product Overview Dual logic-level N-channel MOSFET employing TrenchMOS technology in an LFPAK56D (dual Power - SO8) package. Designed and certified to ... 2026-02-10 01:01:45

The BUK9K35-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.

The BUK9K35-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications. for sale
Product Overview Dual logic-level N-channel MOSFET employing TrenchMOS technology in an LFPAK56D (dual Power - SO8) package. Designed and certified to ... 2026-02-10 01:01:34
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