China Astec Power Supply manufacturer
ShenZhen QingFengYuan Technology Co.,Ltd.
Shenzhen QINGFENGYUAN Technology Co., Ltd. was established in 2013. It is a large-scale professional electronic component distributor with a complete range of products. Products include analog
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ShenZhen QingFengYuan Technology Co.,Ltd.

City: shenzhen

Country/Region:china

Tel:86-180-3344-1064

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diode triode transistor

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PMV48XPAR employs a P-channel enhancement-mode field-effect transistor (FET) utilising trench MOSFET technology, housed in a compact SOT23 (TO-236AB) package.

PMV48XPAR employs a P-channel enhancement-mode field-effect transistor (FET) utilising trench MOSFET technology, housed in a compact SOT23 (TO-236AB) package. for sale
Product Overview A P-channel enhancement-mode field-effect transistor (FET) utilising trench MOSFET technology, housed in a compact SOT23 (TO-236AB) ... 2026-02-11 03:17:54

PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.

PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package. for sale
See Details Images-Contact us for send SHENZHEN QINGFENGYUAN TECHNOLOGY CO.,LTD. If you see this description on the product, it proves that the ... 2026-02-11 03:17:52

PMEG4010CEH, 115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.

PMEG4010CEH, 115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package. for sale
See Details Images-Contact us for send SHENZHEN QINGFENGYUAN TECHNOLOGY CO.,LTD. If you see this description on the product, it proves that the ... 2026-02-11 03:17:51

PMEG4010BEA, 115V planar Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, utilising an ultra-compact SOD323 (SC-76) surface-mount device.

PMEG4010BEA, 115V planar Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, utilising an ultra-compact SOD323 (SC-76) surface-mount device. for sale
Application Areas High-efficiency DC-to-DC conversion Voltage clamping Protection circuits Low-voltage rectification Blocking diodes Low-power ... 2026-02-11 03:17:38

24AA02/SN is a 2 Kbit electrically erasable PROM.

24AA02/SN is a 2 Kbit electrically erasable PROM. for sale
See Details Images-Contact us for send SHENZHEN QINGFENGYUAN TECHNOLOGY CO.,LTD. If you see this description on the product, it proves that the ... 2026-02-10 01:08:09

PMV100EPAR P-channel enhanced-mode field-effect transistor (FET), employing trench MOSFET technology

PMV100EPAR P-channel enhanced-mode field-effect transistor (FET), employing trench MOSFET technology for sale
Product Overview A N-channel enhancement-mode field-effect transistor (FET) utilising trench MOSFET technology, housed in a compact SOT23 surface... 2026-02-10 01:08:01

PESD1IVN27-AX employs a compact SOD323 (SC-76) surface-mount device (SMD) plastic-encapsulated ESD protection component.

PESD1IVN27-AX employs a compact SOD323 (SC-76) surface-mount device (SMD) plastic-encapsulated ESD protection component. for sale
Product Overview An ESD protection device utilising a compact SOD323 (SC-76) surface-mount device (SMD) plastic package, designed to safeguard ... 2026-02-10 01:05:49

PESD1IVN24-AX employs a compact SOD323 (SC-76) surface-mount device (SMD) plastic-encapsulated ESD protection component.

PESD1IVN24-AX employs a compact SOD323 (SC-76) surface-mount device (SMD) plastic-encapsulated ESD protection component. for sale
Product Overview An ESD protection device utilising a compact SOD323 (SC-76) surface-mount device (SMD) plastic package, designed to safeguard ... 2026-02-10 01:05:24

BUK7K6R8-40E,115 employs TrenchMOS technology and is packaged as a dual-channel standard-level N-channel MOSFET in an LFPAK56D package, suitable for high-performance automotive applications.

BUK7K6R8-40E,115 employs TrenchMOS technology and is packaged as a dual-channel standard-level N-channel MOSFET in an LFPAK56D package, suitable for high-performance automotive applications. for sale
Product Overview A dual-channel standard-level N-channel MOSFET utilising TrenchMOS technology, packaged in LFPAK56D (dual Power-SO8). This product ... 2026-02-10 01:05:12

BSS138BK,215 are N-channel enhancement-mode field-effect transistors (FETs) employing trench MOSFET technology, housed in a compact SOT23 (TO-236AB) surface-mount device (SMD) plastic package.

BSS138BK,215 are N-channel enhancement-mode field-effect transistors (FETs) employing trench MOSFET technology, housed in a compact SOT23 (TO-236AB) surface-mount device (SMD) plastic package. for sale
Product Overview An N-channel enhancement-mode field-effect transistor (FET) utilising trench MOSFET technology, housed in a compact SOT23 (TO-236AB) ... 2026-02-10 01:05:01
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