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spi flash memory ic
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Product Details Mobile Low-Power DDR SDRAM Features • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined ...
2024-12-09 22:41:44
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Product Details Description The CAT24C32 is a 32−Kb CMOS Serial EEPROM devices, internally organized as 4096 words of 8 bits each. It features a 32...
2024-12-09 22:41:44
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Product Details DESCRIPTION The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as 2,097,152 words by 8 bits...
2024-12-09 22:41:44
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Product Details DESCRIPTION The CAT34WC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each. Catalyst’s advanced CMOS ...
2024-12-09 22:41:44
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Product Details ■ Features 1. Built-in schmidt trigger circuit 2. High sensitivity(E V : MAX. 35rx at Ta= 25˚C) 3. A wide range of operating supply ...
2024-12-09 22:41:44
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Product Details DESCRIPTION The ISSI IS61C1024AL/IS64C1024AL is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAMs. They are ...
2024-12-09 22:41:44
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Product Details GENERAL DESCRIPTION The K6T4008V1C and K6T4008U1C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families ...
2024-12-09 22:41:44
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Product Details FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward ...
2024-12-09 22:41:44
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Product Details DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ...
2024-12-09 22:41:44
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Product Details DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by ...
2024-12-09 22:41:44
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