China Integrated Circuit IC manufacturer
Sanhuang electronics (Hong Kong) Co., Limited
Sanhuang Electronics (Hong Kong) Co., Limite
3
Home > Products > Flash Memory IC >

DS1220AD-100IND+ IC NVSRAM 16KBIT PARALLEL 24EDIP Analog Devices Inc./Maxim Integrated

Browse Categories

Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

Tel:86-755-88859989

Contact Person:
Miss.Zhao
View Contact Details

DS1220AD-100IND+ IC NVSRAM 16KBIT PARALLEL 24EDIP Analog Devices Inc./Maxim Integrated

Brand Name Analog Devices Inc./Maxim Integrated
Model Number DS1220AD-100IND+
Minimum Order Quantity 1
Price Based on current price
Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 16Kbit
Memory Organization 2K x 8
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 100ns
Access Time 100 ns
Voltage - Supply 4.5V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Through Hole
Package / Case 24-DIP Module (0.600", 15.24mm)
Supplier Device Package 24-EDIP
Detailed Product Description

Product Details

 

DESCRIPTION

The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

 

 

FEATURES

■ 10 years minimum data retention in the absence of external power
■ Data is automatically protected during power loss
■ Directly replaces 2k x 8 volatile static RAM or EEPROM
■ Unlimited write cycles
■ Low-power CMOS
■ JEDEC standard 24-pin DIP package
■ Read and write access times of 100 ns
■ Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
■ Full ±10% VCC operating range (DS1220AD)
■ Optional ±5% VCC operating range (DS1220AB)
■ Optional industrial temperature range of -40°C to +85°C, designated IND

 

Specifications

AttributeAttribute Value
ManufacturerDALLAS SEMICONDUDTORS
Product CategoryMemory ICs
SeriesDS1220AD
PackagingTube
Mounting-StyleThrough Hole
Package-Case24-DIP Module (0.600", 15.24mm)
Operating-Temperature-40°C ~ 85°C (TA)
InterfaceParallel
Voltage-Supply4.5 V ~ 5.5 V
Supplier-Device-Package24-EDIP
Memory Capacity16K (2K x 8)
Memory-TypeNVSRAM (Non-Volatile SRAM)
Speed100ns
Access-Time100 ns
Format-MemoryRAM
Maximum Operating Temperature+ 85 C
Operating temperature range- 40 C
Operating-Supply-Current85 mA
Interface-TypeParallel
Organization2 k x 8
Part-#-Aliases90-1220A+D1I DS1220AD
Data-Bus-Width8 bit
Supply-Voltage-Max5.5 V
Supply-Voltage-Min4.5 V
Package-CaseEDIP-24

Functional compatible component

Form,Package,Functional compatible component

 

Manufacturer Part#DescriptionManufacturerCompare
DS1220Y-100
Memory
Non-Volatile SRAM Module, 2KX8, 100ns, CMOS, PDIP24, 0.720 INCH, EXTENDED, DIP-24Dallas SemiconductorDS1220AD-100IND+ vs DS1220Y-100
DS1220AB-100IND
Memory
Non-Volatile SRAM Module, 2KX8, 100ns, CMOS, 0.720 INCH, PLASTIC, DIP-24Maxim Integrated ProductsDS1220AD-100IND+ vs DS1220AB-100IND
DS1220AD-100
Memory
Non-Volatile SRAM Module, 2KX8, 100ns, CMOS, PDIP24, 0.720 INCH, EXTENDED, DIP-24Dallas SemiconductorDS1220AD-100IND+ vs DS1220AD-100
DS1220Y-100IND
Memory
Non-Volatile SRAM Module, 2KX8, 100ns, CMOS, 0.720 INCH,DIP-24Maxim Integrated ProductsDS1220AD-100IND+ vs DS1220Y-100IND
DS1220AD-100IND
Memory
Non-Volatile SRAM Module, 2KX8, 100ns, CMOS, 0.720 INCH, PLASTIC, DIP-24Maxim Integrated ProductsDS1220AD-100IND+ vs DS1220AD-100IND
DS1220AB-100+
Memory
Non-Volatile SRAM Module, 2KX8, 100ns, CMOS, PDMA24, 0.720 INCH, ROHS COMPLIANT, PLASTIC, DIP-24Maxim Integrated ProductsDS1220AD-100IND+ vs DS1220AB-100+
DS1220AB-100IND+
Memory
Non-Volatile SRAM Module, 2KX8, 100ns, CMOS, PDMA24, 0.720 INCH, ROHS COMPLIANT, PLASTIC, DIP-24Maxim Integrated ProductsDS1220AD-100IND+ vs DS1220AB-100IND+
DS1220Y-100+
Memory
Non-Volatile SRAM Module, 2KX8, 100ns, CMOS, 0.720 INCH, ROHS COMPLIANT, DIP-24Maxim Integrated ProductsDS1220AD-100IND+ vs DS1220Y-100+
DS1220Y-100IND+
Memory
Non-Volatile SRAM Module, 2KX8, 100ns, CMOS, 0.720 INCH, ROHS COMPLIANT, DIP-24Maxim Integrated ProductsDS1220AD-100IND+ vs DS1220Y-100IND+
DS1220AB-100
Memory
2KX8 NON-VOLATILE SRAM MODULE, 100ns, DMA24, 0.720 INCH, PLASTIC, DIP-24Rochester Electronics LLCDS1220AD-100IND+ vs DS1220AB-100

Descriptions

NVSRAM (Non-Volatile SRAM) Memory IC 16Kb (2K x 8) Parallel 100ns 24-EDIP
NVRAM 16k Nonvolatile SRAM
Related Products
Email to this supplier
 
From:
Enter your Email please.
To: Sanhuang electronics (Hong Kong) Co., Limited
Subject:
Message:
Characters Remaining: (80/3000)