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Product Details General Description BR24G04-3 is a serial EEPROM of I2C BUS Interface Method Features ■ Completely conforming to the world standard ...
2024-12-09 22:41:44
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Product Details FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V ● High speed data ...
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Product Details Description: The Microchip Technology Inc. 93XX56A/B/C devices are 2Kbit low-voltage serial Electrically Erasable PROMs (EEPROM). Word...
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Product Details Functional Description[1] The CY7C1021DV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has ...
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Product Details Description: The Microchip Technology Inc. 93XX46A/B/C devices are 1Kbit low-voltage serial Electrically Erasable PROMs (EEPROM). Word...
2024-12-09 22:41:44
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Product Details DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has ...
2024-12-09 22:41:44
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Product Details [MCL] BROADBAND CW TWT LAB AMPLIFIER FOR RADAR, EMC AND EW TESTING The MT4100 broadband amplifier is leveraged around the field-proven ...
2024-12-09 22:41:44
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Product Details DDR3 SDRAM 2Gb: x4, x8, x16 DDR3 SDRAM Features • VDD= VDDQ= 1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential ...
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Product Details DEVICE OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs ...
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Product Details Description The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using high-performance, high...
2024-12-09 22:41:44
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