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Sanhuang electronics (Hong Kong) Co., Limited
Sanhuang Electronics (Hong Kong) Co., Limite
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6116LA25SOG8 IC SRAM 16KBIT PARALLEL 24SOIC Renesas Electronics America Inc

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Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

Tel:86-755-88859989

Contact Person:
Miss.Zhao View Contact Details

6116LA25SOG8 IC SRAM 16KBIT PARALLEL 24SOIC Renesas Electronics America Inc
Brand Name Renesas Electronics America Inc
Model Number 6116LA25SOG8
Minimum Order Quantity 1
Price Based on current price
Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 16Kbit
Memory Organization 2K x 8
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 25ns
Access Time 25 ns
Voltage - Supply 4.5V ~ 5.5V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 24-SOIC (0.295", 7.50mm Width)
Supplier Device Package 24-SOIC
Detailed Product Description

Product Details

 

Description

The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using high-performance, high-reliability CMOS technology.

Features
◆ High-speed access and chip select times
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
– Industrial: 20/25ns (max.)
– Commercial: 15/20/25ns (max.)
◆ Low-power consumption
◆ Battery backup operation
– 2V data retention voltage (LA version only)
◆ Produced with advanced CMOS high-performance
technology
◆ CMOS process virtually eliminates alpha particle soft-error
rates
◆ Input and output directly TTL-compatible
◆ Static operation: no clocks or refresh required
◆ Available in ceramic 24-pin DIP, ceramic and plastic 24-pin Thin
Dip and 24-pin SOIC
◆ Military product compliant to MIL-STD-833, Class B

 

Specifications

AttributeAttribute Value
ManufacturerIntegrated Circuit Systems
Product CategoryMemory ICs
Series-
PackagingAlternate Packaging
Package-Case24-SOIC (0.295", 7.50mm Width)
Operating-Temperature0°C ~ 70°C (TA)
InterfaceParallel
Voltage-Supply4.5 V ~ 5.5 V
Supplier-Device-Package24-SOIC
Memory Capacity16K (2K x 8)
Memory-TypeSRAM - Asynchronous
Speed25ns
Format-MemoryRAM
Functional compatible componentForm,Package,Functional compatible component
Manufacturer Part#DescriptionManufacturerCompare
6116LA20SOGI
Memory		SOIC-24, TubeIntegrated Device Technology Inc6116LA25SOG8 vs 6116LA20SOGI
6116LA20SOG
Memory		SOIC-24, TubeIntegrated Device Technology Inc6116LA25SOG8 vs 6116LA20SOG
STK22C48-SF25
Memory		Non-Volatile SRAM, 2KX8, 25ns, CMOS, PDSO28, 0.350 INCH, PLASTIC, SOIC-28Simtek Corporation6116LA25SOG8 vs STK22C48-SF25
6116LA25SOGI
Memory		SOIC-24, TubeIntegrated Device Technology Inc6116LA25SOG8 vs 6116LA25SOGI
6116LA25SOG
Memory		SOIC-24, TubeIntegrated Device Technology Inc6116LA25SOG8 vs 6116LA25SOG
STK22C48-SF45I
Memory		2KX8 NON-VOLATILE SRAM, 45ns, PDSO28, 0.350 INCH, PLASTIC, SOIC-28Rochester Electronics LLC6116LA25SOG8 vs STK22C48-SF45I
STK22C48-SF25I
Memory		2KX8 NON-VOLATILE SRAM, 25ns, PDSO28, 0.350 INCH, PLASTIC, SOIC-28Rochester Electronics LLC6116LA25SOG8 vs STK22C48-SF25I
STK22C48-NF45I
Memory		2KX8 NON-VOLATILE SRAM, 45ns, PDSO28, 0.300 INCH, PLASTIC, SOIC-28Rochester Electronics LLC6116LA25SOG8 vs STK22C48-NF45I

Descriptions

SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parallel 25ns 24-SOIC
SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM
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