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Product Details FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward ...
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Product Details Introduction Intended Functionality The blood pressure monitor (BPM) reference design shows how to implement a system that can measure ...
2024-12-09 22:41:44
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Product Details SUMMARY DESCRIPTION The M68AW127B is a 1Mbit (1,048,576 bit) CMOS SRAM, organized as 131,072 words by 8 bits. The device features ...
2024-12-09 22:41:44
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Product Details DESCRIPTION The 4 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, ...
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Product Details DESCRIPTION The IS66_ series are optically coupled isolators consisting of infrared light emitting diode and a high voltage NPN ...
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Product Details Axial Leaded Precision Resistors The Holco range of Precision Metal Film Resistors meets the requirement for economically priced ...
2024-12-09 22:41:44
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Product Details Mobile Low-Power DDR SDRAM Features • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined ...
2024-12-09 22:41:44
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Product Details Description The CAT24C32 is a 32−Kb CMOS Serial EEPROM devices, internally organized as 4096 words of 8 bits each. It features a 32...
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Product Details DESCRIPTION The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as 2,097,152 words by 8 bits...
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Product Details DESCRIPTION The CAT34WC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each. Catalyst’s advanced CMOS ...
2024-12-09 22:41:44
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