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Sanhuang electronics (Hong Kong) Co., Limited
Sanhuang Electronics (Hong Kong) Co., Limite
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CYDM256B16-55BVXI IC SRAM 256KBIT PAR 100VFBGA Infineon Technologies

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Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

Tel:86-755-88859989

Contact Person:
Miss.Zhao View Contact Details

CYDM256B16-55BVXI IC SRAM 256KBIT PAR 100VFBGA Infineon Technologies
Brand Name Infineon Technologies
Model Number CYDM256B16-55BVXI
Minimum Order Quantity 1
Price Based on current price
Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Dual Port, MoBL
Memory Size 256Kbit
Memory Organization 16K x 16
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 55ns
Access Time 55 ns
Voltage - Supply 1.7V ~ 1.9V, 2.4V ~ 2.6V, 2.7V ~ 3.3V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 100-VFBGA
Supplier Device Package 100-VFBGA (6x6)
Detailed Product Description

Product Details

Axial Leaded Precision Resistors

The Holco range of Precision Metal Film Resistors meets the requirement for economically priced components for industrial and military applications. The manufacturing facility utilises closely controlled production processes including the sputter coating of metal alloy films to ceramic substrates, and laser spiralling to achieve close tolerance and high stability resistors. An epoxy coating is applied for environmental and mechanical protection. Commercially the Series is available in two case sizes, from 1 ohm to 4M ohms, tolerances from 0.05% to 1% and TCRs from 5ppm/°C to 100ppm/°C. Offered with release to BS CECC 40101 004, 030 and 804 the H8 is available via distribution.

 

Key Features

■ Ultra Precision - Down To 0.05%
■ Matched Sets Available To 2ppm/°C
■ High Pulse Withstand
■ Low Reactance
■ Low TCR - Down To 5ppm/°C
■ Long Term Stability
■ Up To 1 Watt At 70°C
■ Released To CECC 40101 004, 030 And 804

 

Specifications

AttributeAttribute Value
ManufacturerCypress Semiconductor
Product CategoryMemory ICs
SeriesCYDM256B16
TypeAsynchronous
PackagingTray Alternate Packaging
Mounting-StyleSMD/SMT
TradenameMoBL
Package-Case100-VFBGA
Operating-Temperature-40°C ~ 85°C (TA)
InterfaceParallel
Voltage-Supply1.7 V ~ 1.9 V, 2.4 V ~ 2.6 V, 2.7 V ~ 3.3 V
Supplier-Device-Package100-VFBGA (6x6)
Memory Capacity256K (16K x 16)
Memory-TypeSRAM - Dual Port, MoBL
Speed55ns
Data-RateSDR
Access-Time55 ns
Format-MemoryRAM
Maximum Operating Temperature+ 85 C
Operating temperature range- 40 C
Interface-TypeParallel
Organization16 k x 16
Supply-Current-Max25 mA
Supply-Voltage-Max1.9 V
Supply-Voltage-Min1.7 V
Package-CaseBGA-100

Functional compatible component

Form,Package,Functional compatible component

 

Manufacturer Part#DescriptionManufacturerCompare
IDT70P9268L50BZG
Memory		Dual-Port SRAM, 16KX16, 10ns, PBGA100, GREEN, FPBGA-100Integrated Device Technology IncCYDM256B16-55BVXI vs IDT70P9268L50BZG
CYDMX256B16-65BVXI
Memory		Dual-Port SRAM, 16KX16, 65ns, CMOS, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, MO-195C, VFBGA-100Cypress SemiconductorCYDM256B16-55BVXI vs CYDMX256B16-65BVXI
CYDMX256A16-65BVXI
Memory		Dual-Port SRAM, 16KX16, 65ns, CMOS, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, MO-195C, VFBGA-100Cypress SemiconductorCYDM256B16-55BVXI vs CYDMX256A16-65BVXI
CYDM256B16-55BVXIT
Memory		Multi-Port SRAM, 16KX16, 55ns, CMOS, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, MO-195C, VFBGA-100Cypress SemiconductorCYDM256B16-55BVXI vs CYDM256B16-55BVXIT
IDT70P926850BZGI
Memory		Dual-Port SRAM, 16KX16, 12ns, CMOS, PBGA100, GREEN, FPBGA-100Integrated Device Technology IncCYDM256B16-55BVXI vs IDT70P926850BZGI
IDT70P926850BZG
Memory		Dual-Port SRAM, 16KX16, 12ns, CMOS, PBGA100, GREEN, FPBGA-100Integrated Device Technology IncCYDM256B16-55BVXI vs IDT70P926850BZG
CYDM256B16-55BVXC
Memory		16KX16 DUAL-PORT SRAM, 55ns, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, MO-195C, VFBGA-100Rochester Electronics LLCCYDM256B16-55BVXI vs CYDM256B16-55BVXC
70P265L90BYGI
Memory		Dual-Port SRAM, 16KX16, 90ns, CMOS, PBGA100, 0.5 MM PITCH, GREEN, BGA-100Integrated Device Technology IncCYDM256B16-55BVXI vs 70P265L90BYGI
IDT70P9268L50BZGI
Memory		Dual-Port SRAM, 16KX16, 10ns, PBGA100, GREEN, FPBGA-100Integrated Device Technology IncCYDM256B16-55BVXI vs IDT70P9268L50BZGI
70P265L90BYGI8
Memory		Dual-Port SRAM, 16KX16, 90ns, CMOS, PBGA100, 0.50 MM PITCH, GREEN, BGA-100Integrated Device Technology IncCYDM256B16-55BVXI vs 70P265L90BYGI8

Descriptions

SRAM - Dual Port, MoBL Memory IC 256Kb (16K x 16) Parallel 55ns 100-VFBGA (6x6)
SRAM Chip Async Dual 1.8V 256K-Bit 16K x 16 55ns 100-Pin VFBGA Tray
SRAM 256K 16Kx16 MoBL Dual Port IND
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