111 - 120 of 846
flash memory ic 512mbit
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Product Details PRODUCT DESCRIPTION The SST38VF166 consists of three memory banks, 2 each 512K x16 bits sector mode flash EEPROM plus a 4K x16 bits ...
2024-12-09 22:41:44
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... Power Supply Operation – Full voltage range: 2.7 to 3.6V read and write operations ■ Memory Architecture – Uniform 64 kB sectors – Top or bottom ...
2024-12-09 22:41:44
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Product Details GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable ...
2024-12-09 22:41:44
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Product Details GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable ...
2024-12-09 22:41:44
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Product Details GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 ...
2024-12-09 22:41:44
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...-Type Non-Volatile Memory-Format EEPROM Technology EEPROM Memory-Size 256Kb (32K x 8) Write-Cycle-Time-Word-Page 10ms Access-Time 90ns Memory...
2024-12-09 22:41:56
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Product Details [Toshiba] 2GBIT (256M u 8BITS) CMOS NAND E2PROM DESCRIPTION The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND ...
2024-12-09 22:41:44
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Product Details General Description This description applies specifically to the M29F 16Mb (2 Meg x 8 or 1 Meg x 16) nonvolatile memory device, but ...
2024-12-09 22:41:44
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Product Details SUMMARY DESCRIPTION The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These ...
2024-12-09 22:41:56
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...IC Chips Series - Packaging Alternate Packaging Mounting-Style SMD/SMT Package-Case TO-236-3, SC-59, SOT-23-3 Operating-Temperature -40°C ~ 85°C ...
2024-12-09 22:41:44
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