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MT28F128J3FS-12 ET TR IC FLASH 128MBIT PARALLEL 64FBGA Micron Technology Inc.

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Sanhuang electronics (Hong Kong) Co., Limited

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MT28F128J3FS-12 ET TR IC FLASH 128MBIT PARALLEL 64FBGA Micron Technology Inc.

Brand Name Micron Technology Inc.
Model Number MT28F128J3FS-12 ET TR
Minimum Order Quantity 1
Price Based on current price
Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH
Memory Size 128Mbit
Memory Organization 16M x 8, 8M x 16
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page -
Access Time 120 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 64-FBGA
Supplier Device Package 64-FBGA (10x13)
Detailed Product Description

Product Details

 

GENERAL DESCRIPTION

The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F640J3 contains 67,108,864 bits organized as 8,388,608 bytes (8 bits) or 4,194,304 words (16 bits). This 64Mb device is organized as sixty-four 128KB erase blocks.
Similarly, the MT28F320J3 contains 33,554,432 bits organized as 4,194,304 bytes (8 bits) or 2,097,152 words (16 bits). This 32Mb device is organized as thirty-two 128KB erase blocks.
These three devices feature in-system block locking. They also have common flash interface (CFI) that permits software algorithms to be used for entire families of devices. The software is device-independent, JEDEC ID-independent with forward and backward compatibility.

 

 

FEATURES

• x8/x16 organization
• One hundred twenty-eight 128KB erase blocks (128Mb)
Sixty-four 128KB erase blocks (64Mb)
Thirty-two 128KB erase blocks (32Mb)
• VCC, VCCQ, and VPEN voltages:
2.7V to 3.6V VCC operation
2.7V to 3.6V or 4.5V to 5.5V* VCCQ operation
2.7V to 3.6V, or 5V VPEN application programming
• Interface Asynchronous Page Mode Reads:
150ns/25ns read access time (128Mb)
120ns/25ns read access time (64Mb)
110ns/25ns read access time (32Mb)
• Enhanced data protection feature with VPEN = VSS Flexible sector locking Sector erase/program lockout during power transition
• Security OTP block feature Permanent block locking (Contact factory for availability)
• Industry-standard pinout
• Inputs and outputs are fully TTL-compatible
• Common Flash Interface (CFI) and Scalable Command Set
• Automatic write and erase algorithm
• 4.7µs-per-byte effective programming time using write buffer
• 128-bit protection register
64-bit unique device identifier
64-bit user-programmable OTP cells
• 100,000 ERASE cycles per block
• Automatic suspend options:
Block Erase Suspend-to-Read
Block Erase Suspend-to-Program
Program Suspend-to-Read

 

Specifications

AttributeAttribute Value
ManufacturerMicron Technology Inc.
Product CategoryMemory ICs
Series-
PackagingCut Tape (CT)
Package-Case64-FBGA
Operating-Temperature-40°C ~ 85°C (TA)
InterfaceParallel
Voltage-Supply2.7 V ~ 3.6 V
Supplier-Device-Package64-FBGA (10x13)
Memory Capacity128M (16M x 8, 8M x 16)
Memory-TypeFLASH
Speed120ns
Format-MemoryFLASH

Descriptions

FLASH Memory IC 128Mb (16M x 8, 8M x 16) Parallel 120ns 64-FBGA (10x13)
NAND Flash Parallel 3.3V 128M-bit 16M x 8/8M x 16 120ns 64-Pin FBGA T/R
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