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external data acquisition ic
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Product Details FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward ...
2024-12-09 22:41:44
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Product Details DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ...
2024-12-09 22:41:44
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Product Details GENERAL DESCRIPTION The W25Q16DW (16M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and ...
2024-12-09 22:41:44
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Product Details DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by ...
2024-12-09 22:41:44
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Product Details Description W9812G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 2M words x 4 banks x 16 bits. ...
2024-12-09 22:41:44
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Product Details DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ...
2024-12-09 22:41:44
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Product Details Functional description The AS7C4096A is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as ...
2024-12-09 22:41:44
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Product Details Functional Description The CY7C008/009 and CY7C018/019 are low-power CMOS 64K, 128K x 8/9 dual-port static RAMs. Various arbitration ...
2024-12-09 22:41:44
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Product Details [Toshiba] 2GBIT (256M u 8BITS) CMOS NAND E2PROM DESCRIPTION The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND ...
2024-12-09 22:41:44
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Product Details FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward ...
2024-12-09 22:41:44
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