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High Temperature Tolerance Silicon Carbide MOSFET For Electric Power *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: ...
2025-07-11 00:37:58
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High Breakdown Voltage Silicon Carbide MOSFET For Power Inverters *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: ...
2025-07-11 00:37:58
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20A 650V 150mΩ Stability And Uniformity Cool MOS For Switched Mode Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190F Package:TO-220F ...
2025-07-11 00:37:58
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Iniaturization And Higher Efficiency 11A 650V 350mΩ Super Junction MOSFET N-channel Super Junction MOSFET Part No.:LCS65R380F Package:TO-220F MAIN ...
2025-07-11 00:37:58
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... reduce energy consumption and save costs in the long run. Another advantage of this product is its thermal robustness, which ensures reliable and ...
2025-07-11 00:37:58
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Critical Element Low VF Schottky Diode For Power Management Product Description: Our Low VF Schottky diodes offer 20A half wave and 40A full wave ...
2025-07-11 00:37:58
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Low Power Loss Ultra Low VF Schottky Diode For High Speed Circuit *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: ...
2025-07-11 00:37:58
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... (V) If (A) Typ (V) Max (V) Typ (uA) Max (uA) If (A) Typ (V) Typ (mA) MBR20150CS TO-252 1 20 150 10 0.83 0.90 1.1 10 3 - - 290 150 Product ...
2025-07-11 00:37:58
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...tem efficiency. The PDFN5*6,TO-252 and TO-220C package options provide flexibility for designers and engineers to choose the best fit for their ...
2025-07-11 00:37:58
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...MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=10V:274mΩ FEATURES • Low gate charge • Low RDS(on) ...
2025-07-11 00:37:58
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