China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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to 252 high power mosfet

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...MOSFET Multi Fuction Cool Mos Product Description: If you're looking for a high-quality power discrete device for your telecom or server power ... 2025-07-11 00:37:58
High Voltage Levels Super Junction MOSFET 650V TO-220F For Power Supply Product Description: With its much lower Ron*A performance, the Super Junction ... 2025-07-11 00:37:58
... Typ (V) Max (V) Typ (uA) Max (uA) If (A) Typ (V) Typ (mA) MBR10200CS TO-252 1 10 200 5 0.85 0.92 0.6 5 2 - - 130 150 Product Description: Our ... 2025-07-11 00:37:58
.... With low power loss and low gate charge, this MOSFET helps to minimize switching loss and reduce power consumption, making it an ideal choice for ... 2025-07-11 00:37:58
... power consumption. The use of high-quality silicon material ensures reliable performance and long-term durability. With its low power loss, this ... 2025-07-11 00:37:58
... performance with low power loss. This means that the device consumes less power, and is highly efficient in delivering power across various ... 2025-04-01 14:35:06
...means that it consumes less energy compared to other electronic components, making it an excellent choice for energy-efficient devices and ... 2025-07-11 00:37:58
...Power Supplies High Dense Super Junction Design with Large EMI Margin and High Density Product Description: As an N-type MOSFET, this device offers ... 2025-07-11 00:37:58
... with less power loss. This feature makes it highly efficient, making it suitable for applications where high efficiency is a must. It is perfect ... 2025-07-11 00:37:58
...MOSFET Power Transistor Anti EMI For SMPS Product Description: One of the standout features of this Super Junction MOSFET is its 100% avalanche ... 2025-07-11 00:37:58
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