China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
1
Home > Products >

to 247 high power igbt

Browse Categories

Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
View Contact Details
81 - 89 of 89

to 247 high power igbt

Selling leads
High Voltage MOSFET For High Speed Switching Power Loss Reduction Photovoltaic *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, ... 2025-07-28 00:25:39
...High Voltage MOSFET 100% Avalanche Tested Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. ... 2025-02-08 13:29:27
... (V) Typ (uA) Max (uA) If (A) Typ (V) Typ (mA) MBR40200PT TO-247 2 40 200 20 0.84 0.90 2.0 10 7 - - 450 150 Product Description: Our Schottky ... 2025-02-08 13:30:17
...Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190B Package:TO-247 MAIN CHARACTERISTICS ID:30A VDSS:650V RDSON-typ VGS=10V:120mΩ ... 2025-07-28 00:25:39
...High Current Cool Mos N-channel Super Junction MOSFET Part No.:LC65R075B Package:TO-247 MAIN CHARACTERISTICS ID:47A VDSS:600V RDSON-typ VGS=10V:68m... 2025-07-28 00:25:39
*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;... 2025-07-28 00:25:39
50A200V N Channel Enhancement MOSFET Low Power Loss Silicon MOSFET Transistor With Low Rds(ON) Part Number Package Die Channel ID (A) VDSS (V) VGSS (V... 2025-04-01 14:35:10
...Power Management Product Description: Our Schottky Barrier Diodes come in a variety of packages such as TO-251, TO-252, TO-263, TO-220, and TO-247, ... 2025-07-28 00:25:39
...Typ (uA) Max (uA) If (A) Typ (V) Typ (mA) MBR30200PT TO-247 1 30 200 15 0.95 1.0 5 180 175 Product Description: With their low VF, the MBR30200PT ... 2025-02-08 13:30:17
Page 9 of 9 :   |< << 1 2 3 4 5 6 7 8 9 >> >|