China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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to 247 high power igbt

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High Efficiency Power IGBT For Solar Panels Or Batteries Into AC Power Product Description: This High Power IGBT is equipped with faster switching ... 2025-07-28 00:25:39
...Power IGBT 650V-1200V Energy Saving For Switching Switch Product Description: The High Power IGBT is a reliable and efficient semiconductor device ... 2025-07-28 00:25:39
...Power IGBT High Ruggedness Performance For PFC Applications Product Description: The High Power IGBT is a type of device that is used in many ... 2025-07-28 00:25:39
...High Power MOSFET TO-247 For Uninterruptible Power Supply Product Description: This series MOSFET is a type N device that is specifically designed ... 2025-07-28 00:25:39
...High Frequency N Channel Enhancement Mode Power IGBT For PFC MAIN CHARACTERISTICS Ic(A):40A Vces(V):650V VGES(V):±20 TRR(nS):33nS FEATURES • Trench ... 2025-07-28 00:25:39
Faster Switching Speed Power IGBT Device For Grid infrastructure *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100... 2025-07-28 00:25:39
Semiconductor Device Ultra High Voltage IGBT With High Input Impedance *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-28 00:25:39
... MAX Typ Typ CS20N50A6 TO-247 N 20 500 ±30 2 4 210 270 Product Description: This N-type MOSFET is capable of handling high voltage, with a gate... 2025-02-08 13:29:39
...Power High Temperature Resistant Low Leakage N Channel IGBT Our High Voltage Power Semiconductors are capable of handling high voltages and ... 2025-07-28 00:25:39
Product Description: N Type High Temperature Resistance Low Leakage Low Junction Capacitance Power Semiconductor Designed with a low junction ... 2025-07-28 00:25:39
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