China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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switching power igbt

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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switching power igbt

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...ideal for use in battery-powered devices that require low power consumption. This MOSFET also offers high switching speeds and low gate charge, ... 2025-07-11 00:37:58
... for on-state efficiency. This means that the MOSFET is able to operate at a high level of efficiency, providing optimal power output while ... 2025-07-11 00:37:58
...Switching Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR VF(125℃) @IF IR (125℃ IFSM (A) Tj (℃) Min (V) IF (A) Typ (V) Max (V) Typ ... 2025-07-11 00:37:59
...Power Supplies Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR VF(125℃) @IF IR (125℃ IFSM (A) Tj (℃) Min (V) IF (A) Typ (V) Max (V) ... 2025-07-11 00:37:59
...Power Supply N-channel Super Junction MOSFET Part No.:LC60R600D Package:TO-252 MAIN CHARACTERISTICS ID:7A VDSS:600V RDSON-typ VGS=10V:510mΩ ... 2025-07-11 00:37:58
... 0.81 0.88 0.0 1 5 - - 340 175 Product Description: The Low VF Schottky product line is designed for efficiency and speed. With fast switching ... 2025-07-11 00:37:59
... 3 5 0.55 0.65 - 0.73 8 30 5 0.63 2.7 100 Product Description: The Low VF Schottky product is designed to provide fast switching speed and high ... 2025-07-11 00:37:59
... 0.60 40 120 5 0.31 - 220 150 Product Description: One of the key features of the Low VF Schottky product is its fast switching speed. This allows ... 2025-07-11 00:37:59
...: This MOSFET product is built with advanced MOSFET technology which ensures low ON resistance, 100% avalanche tested, low Ciss, and fast switching... 2025-02-08 13:29:32
...Power Rectifier​ Part Number Package Die Io (A) VBR @IR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Trr Tj (℃) Min (V) If (A) Typ (V) Max (V) Typ ... 2025-07-11 00:37:58
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