China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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switching power igbt

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TO-220F Silicon Ultra Low Voltage Mosfet For Power Switching Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height... 2025-07-11 00:37:58
... to other electronic components, making it an excellent choice for energy-efficient devices and applications. Additionally, the MOSFET has a low ... 2025-07-11 00:37:58
650V Fast Recovery Diode Power Control High Speed Switching Capability *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-11 00:37:58
... attribute enables it to handle high current loads with minimal voltage drops. As a result, it can help to reduce power loss and improve the ... 2025-07-11 00:37:58
...Switching Speed High Current Density Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR VF(125℃) @IF IR (125℃ IFSM (A) Tj (℃) Min (V) ... 2025-02-08 13:31:40
...Power Mosfet N Channel For Power Management Id:80A Vdss:30V Rdson-typ(@Vgs=10V):3.82mΩ Features: Advanced Trench Technology Excellent RDS(ON) and ... 2025-07-11 00:37:58
...Power Consumption SMPS Super Junction MOSFET For High Power Application Product Description: One of the key features of this MOSFET is its very ... 2025-07-11 00:37:58
... speeds and low power dissipation. With its low RDS(ON) resistance, our MOSFET product can handle high current loads with minimal power loss, ... 2025-07-11 00:37:58
...Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190B Package:TO-247 MAIN CHARACTERISTICS ID:20A VDSS:650V RDSON-typ VGS=10V:150mΩ ... 2025-07-11 00:37:58
...Power Supply N-channel Super Junction MOSFET Part No.:LC65R075F Package:TO-220F MAIN CHARACTERISTICS ID:47A VDSS:600V RDSON-typ VGS=10V:68mΩ ... 2025-07-11 00:37:58
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