China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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switching high power mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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switching high power mosfet

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...Mosfet Low On Resistance HV Transistor N-channel Super Junction MOSFET Part No.:LCS65R1K0D Package:TO-252 MAIN CHARACTERISTICS ID:4A VDSS:650V ... 2025-07-11 00:37:58
...MOSFET Low Voltage Mosfet For UPS PDFN5060 Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON) 4.5V(mΩ) Qg ... 2025-04-01 14:35:07
...ID TYP MAX Typ Typ LC65R600F TO-220F 1 N 7 650 30 2 4 550 640 Product Description: One of the key features of this MOSFET is its 100% avalanche ... 2025-02-08 13:28:40
...Mosfet For Motor Drive TO-220C Product Description: Our MOSFET is available in three different package options: TO-220AB. This allows for greater ... 2025-07-11 00:37:58
... durability and reliability even under harsh operating conditions. The MOSFET's TO-263, TO-220AB, and TO-220F package options provide flexibility ... 2025-07-11 00:37:58
Power Faster Switching Speed Isolated Gate Bipolar Transistor For Power Supply Units *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-11 00:37:58
...Ω Excellent Gate Charge Super Junction MOSFET For Converters N-channel Super Junction MOSFET Part No.:LCS65R380D Package:TO-252 MAIN CHARACTERISTIC... 2025-07-11 00:37:58
...MOSFET For Battery Protection Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON) 4.5V(mΩ) Qg (nC) Ciss (pF... 2025-04-01 14:35:03
... options provide flexibility in design and application, making it suitable for a broad range of electronic devices and systems. One of the key ... 2025-02-08 13:29:14
...Power IGBT High Ruggedness Performance For PFC Applications Product Description: The High Power IGBT is a type of device that is used in many ... 2025-07-11 00:37:58
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