China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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switching high power mosfet

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High Breakdown Voltage SiC MOSFET For Smart Home Device Power Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-11 00:37:58
.... ID TYP MAX Typ Typ LC65R600D TO-252 1 N 7 650 30 2 4 550 640 Product Description: The Super Junction MOSFET has been 100% avalanche tested to ... 2025-02-08 13:28:40
...MOSFET Low Power Loss Silicon MOSFET Transistor With Low Rds(ON) Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ... 2025-04-01 14:35:10
...free and environmentally friendly. One of the main advantages of our Low Voltage MOSFET product is its ability to improve system efficiency. Its ... 2025-07-11 00:37:58
... but also durable, ensuring long-lasting performance. It is also RoHS compliant, making it an eco-friendly choice for your projects. One of the key ... 2025-07-11 00:37:58
...Power IGBT High Current Capacity N-Channel Enhancement Mode Power IGBT LGT25N120B FEATURES • Trench and field-stop technology • High speed ... 2025-07-11 00:37:58
...Mosfet For Brushless Motors And Lithium Battery Management Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable ... 2025-07-11 00:37:58
... ensures reliable operation even under the toughest conditions. This makes it an ideal choice for telecom and server power supplies, where ... 2025-07-11 00:37:58
7A600V High Breakdown Voltage Mosfet CS7N60A2 To-220F With Low Ciss Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg ... 2025-02-08 13:29:45
...MOSFET With Fast Recovery Diode N-channel Super Junction MOSFET Part No.:LC65R040B Package:TO-247 MAIN CHARACTERISTICS ID:70A VDSS:650V RDSON-typ ... 2025-07-11 00:37:58
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