China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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stable high power mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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stable high power mosfet

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...High Frequency N Channel Enhancement Mode Power IGBT For PFC MAIN CHARACTERISTICS Ic(A):40A Vces(V):650V VGES(V):±20 TRR(nS):33nS FEATURES • Trench ... 2025-07-28 00:25:39
Stable Charging Pile Inverter IGBT, Photovoltaicching Speed Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged ... 2025-07-28 00:25:39
... power loss when the semiconductor is switched on and off. It also makes it ideal for use in high-frequency applications, such as renewable energy ... 2025-07-28 00:25:39
...High Frequency Stable 60KHz Multiscene High Current Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and ... 2025-07-28 00:25:39
...Positive VCE (sat) temperature coefficient • High efficiency for motor control • Excellent current sharing in parallel operation • RoHS compliant ... 2025-07-28 00:25:39
...Power Applications This particular product is a Type N semiconductor with low junction capacitance, making it ideal for high voltage applications. ... 2025-07-28 00:25:39
...Mosfet For Brushless Motors And Lithium Battery Management Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable ... 2025-07-28 00:25:40
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Large EMI Margin Excellent Gate Charge 100% Avalanche Tested Much Lower Ron*A Performance for On-state Efficiency *, *::before, *::after {box-sizing: ... 2025-07-28 00:25:39
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