China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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stable high power mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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stable high power mosfet

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...Mosfet Low On Resistance HV Transistor N-channel Super Junction MOSFET Part No.:LCS65R1K0D Package:TO-252 MAIN CHARACTERISTICS ID:4A VDSS:650V ... 2025-07-28 00:25:39
...Mosfet Switching Regulator N-channel Super Junction MOSFET Part No.:LCS65R600D Package:TO-252 MAIN CHARACTERISTICS ID:7A VDSS:650V RDSON-typ VGS... 2025-07-28 00:25:39
...MOSFET Low Voltage Mosfet For UPS PDFN5060 Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON) 4.5V(mΩ) Qg ... 2025-04-01 14:35:07
...ID TYP MAX Typ Typ LC65R600F TO-220F 1 N 7 650 30 2 4 550 640 Product Description: One of the key features of this MOSFET is its 100% avalanche ... 2025-02-08 13:28:40
... durability and reliability even under harsh operating conditions. The MOSFET's TO-263, TO-220AB, and TO-220F package options provide flexibility ... 2025-07-28 00:25:39
High Efficiency Power IGBT For Solar Panels Or Batteries Into AC Power Product Description: This High Power IGBT is equipped with faster switching ... 2025-07-28 00:25:39
...High Voltage Power Semiconductors are characterized by their High Light, Rapid Switching Capabilities, and Robust Thermal Management. They are ... 2025-07-28 00:25:39
...Ω Excellent Gate Charge Super Junction MOSFET For Converters N-channel Super Junction MOSFET Part No.:LCS65R380D Package:TO-252 MAIN CHARACTERISTIC... 2025-07-28 00:25:39
...MOSFET For Battery Protection Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON) 4.5V(mΩ) Qg (nC) Ciss (pF... 2025-04-01 14:35:03
... options provide flexibility in design and application, making it suitable for a broad range of electronic devices and systems. One of the key ... 2025-02-08 13:29:14
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