China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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speed control high power igbt

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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speed control high power igbt

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...IGBT Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged Positive temperature coefficient • Fast ... 2025-07-11 00:37:58
... MAX Typ Typ CS5N60A2 TO-220F N 5 600 ±30 2 4 1800 2300 17.6 618 Product Description: One of the key features of our High Voltage MOSFET is its Low ... 2025-02-08 13:29:43
...Switching Speed Low VF Schottky For Power Supply And Solar Energy Product Description: One of the key features of the Low VF Schottky product is ... 2025-07-11 00:37:58
...Control Switch Mode Power Supply Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. ... 2025-02-08 13:29:41
*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;... 2025-07-11 00:37:58
... speeds and low power dissipation. With its low RDS(ON) resistance, our MOSFET product can handle high current loads with minimal power loss, ... 2025-07-11 00:37:58
...t make it stand out in the market. Firstly, it has a high breakdown voltage, making it suitable for PWM in motor control and industrial automation ... 2025-02-08 13:29:40
... TO-251 N 2 650 ±30 3 4 4000 4500 11 295 Product Description: One of the standout features of this MOSFET is its low ON resistance, which ensures ... 2025-02-08 13:29:38
...Power Mosfets Electronic Devices Improved System Efficiency Product Description: Our Low Voltage MOSFET boasts of a low on-resistance, which is ... 2025-07-11 00:37:58
...High Voltage MOSFET With Low Gate Charge TO-220F Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) ... 2025-02-08 13:29:29
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