China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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speed control high power igbt

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...Power IGBT High Ruggedness Performance For PFC Applications Product Description: The High Power IGBT is a type of device that is used in many ... 2025-07-11 00:37:58
...Power IGBT For Solar String Inverter Product Description: Features: Product Name: High Power IGBT Application Frequency: 20KHz-60KHz Package Type: ... 2025-07-11 00:37:58
Faster Switching Speed Power IGBT Device For Grid infrastructure *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100... 2025-07-11 00:37:58
...Power IGBT 650V-1200V Energy Saving For Switching Switch Product Description: The High Power IGBT is a reliable and efficient semiconductor device ... 2025-07-11 00:37:58
...High Frequency N Channel Enhancement Mode Power IGBT For PFC MAIN CHARACTERISTICS Ic(A):40A Vces(V):650V VGES(V):±20 TRR(nS):33nS FEATURES • Trench ... 2025-07-11 00:37:58
Semiconductor Device Ultra High Voltage IGBT With High Input Impedance *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-11 00:37:58
...Power High Temperature Resistant Low Leakage N Channel IGBT Our High Voltage Power Semiconductors are capable of handling high voltages and ... 2025-07-11 00:37:58
...packaging and testing of power semiconductor devices.currently has more than 180 has more than 180 employees and more than 10000 square meters area... 2025-07-11 00:37:58
... • Low VCE(sat) • Reliable and Rugged APPLICATIONS • UPS • Motor drives • Boost • Portable power station Q1.Who are we? A:We are based in Guangdong... 2025-07-11 00:37:58
...Power IGBT For Boost MAIN CHARACTERISTICS Ic @TC=100℃ 60A VCE 650V VCE(sat)-typ 1.7V FEATURES • Positive temperature coefficient • Fast Switching • ... 2025-07-11 00:37:58
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