China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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n channel power semiconductor

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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n channel power semiconductor

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50A200V N Channel Enhancement MOSFET Low Power Loss Silicon MOSFET Transistor With Low Rds(ON) Part Number Package Die Channel ID (A) VDSS (V) VGSS (V... 2025-04-01 14:35:10
...Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. Typ MAX Typ Typ CS12N65A2 TO-220F N 12 650 ±30 2 ... 2025-02-08 13:29:40
...Extremely low switching loss • Excellent stability and uniformity • Fast Recovery Time APPLICATIONS • Switch Mode Power Supply(SMPS) • Uninterrupti... 2025-07-11 00:37:58
...channel Super Junction MOSFET Part No.:LC65R075B Package:TO-247 MAIN CHARACTERISTICS ID:47A VDSS:600V RDSON-typ VGS=10V:68mΩ FEATURES • Fast ... 2025-07-11 00:37:58
... and conduction loss • Extremely high commutation ruggedness APPLICATIONS • Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC... 2025-07-11 00:37:58
...Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. Typ MAX Typ Typ CS13N50A8 TO-220F N 13 500 ±30 2 ... 2025-02-08 13:29:46
...Power Efficiency Silicon Low Voltage MOSFET For TO-220F Package LG120N085AP Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS... 2025-04-01 14:35:08
...Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON) 4.5V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. TYP MAX TYP MAX Typ Typ ... 2025-02-08 13:28:59
... • Fast Recovery Body-Diode • Lower Gate Resistance • 100% Avalanche Tested APPLICATIONS • Soft Switching Topologies • Telecom and Sever Power ... 2025-02-12 07:30:10
15A 1200V Inverter IGBT Short Circuit Withstands Time 10μS For Motor Driver N-Channel Enhancement Mode Power IGBT LGT15N120B FEATURES • Trench and ... 2025-07-11 00:37:58
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