China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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n channel power semiconductor

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Stable High Power MOSFET High Performance And Reliability For Switching Product Description: This MOSFET is designed to handle high power applications ... 2025-07-11 00:37:58
... power inverter, and dual-channel MOSFET. It is commonly used in power supplies, motor drives, and audio amplifiers. This product is highly ... 2025-07-11 00:37:58
... voltage • Easy parallel switching capability • Short circuit withstands time 10μs • High ruggedness performance APPLICATIONS • Portable power ... 2025-07-11 00:37:58
... and conduction loss • Extremely high commutation ruggedness APPLICATIONS • Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC... 2025-07-11 00:37:58
...Power MOSFET Empowering Your Power Solutions For Maximum Efficiency Product Description: The MOSFET is a dual channel device that is designed to ... 2025-07-11 00:37:58
Industrial Practical High Power MOSFET High Efficiency And Performance Applications: This product is manufactured in China by LX, a trusted name in ... 2025-07-11 00:37:58
...Power Supply N-channel Super Junction MOSFET Part No.:LC65R600F Package:TO-220F MAIN CHARACTERISTICS ID:7A VDSS:650V RDSON-typ VGS=10V:520mΩ ... 2025-07-11 00:37:58
Multifunctional Low Voltage MOSFET for Power Management Features • Positive temperature coefficient • High speed switching • Low collector to emitter ... 2025-07-11 00:37:58
25A 1200V TO-247 Enhancement Mode Power IGBT High Current Capacity N-Channel Enhancement Mode Power IGBT LGT25N120B FEATURES • Trench and field-stop ... 2025-07-11 00:37:58
25A 1200V TO-247 High Power IGBT High Speed Switching For General Inverter N-Channel Enhancement Mode Power IGBT LGT25N120SB FEATURES • Trench and ... 2025-07-11 00:37:58
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