China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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n channel high power semiconductor

Selling leads
...packaging and testing of power semiconductor devices.currently has more than 180 has more than 180 employees and more than 10000 square meters area... 2025-07-11 00:37:58
...High Voltage Mosfet For Uninterruptible Power Supply Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss ... 2025-02-10 11:19:53
... Typ CS10N65A2 TO-220F N 10 650 ±30 2 4 820 950 Product Description: With its low ON resistance, the CS MOSFET minimizes power loss and maximizes ... 2025-02-08 13:29:30
... 2 4 1040 1500 24 1107 Product Description: One of the key highlights of this MOSFET is its low ON resistance, which results in low loss and low ... 2025-02-08 13:29:28
9A500V CS9N50A2 TO-220F High Voltage Mosfet N Channel Power Transistors Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ... 2025-02-08 13:29:44
7A 650V 525mΩ TO-220F Cool MOS For Uninterruptible Power Supply N-channel Super Junction MOSFET Part No.:LC65R600F Package:TO-220F MAIN CHARACTERISTIC... 2025-07-11 00:37:58
... 4.0 20 - - - 150 150 Product Description: The MBR2060FCT Schottky Barrier Diodes come in a TO-220F package, which is a popular package type for ... 2025-02-08 13:30:15
...High Voltage MOSFET Low ON Resistance For Adapter CS12N65A2 TO-220F Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) ... 2025-02-08 13:29:40
... MAX Typ Typ CS5N60A2 TO-220F N 5 600 ±30 2 4 1800 2300 17.6 618 Product Description: One of the key features of our High Voltage MOSFET is its Low ... 2025-02-08 13:29:43
... N 10 500 ±30 2 4 460 550 Product Description: One of the standout features of the CS10N50A2 MOSFET is its low ON resistance, which allows for ... 2025-02-08 13:29:39
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