China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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n channel high power semiconductor

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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n channel high power semiconductor

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...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
... CS28N50A6 TO-247 N 28 500 ±30 2 4 200 240 Product Description: With 100% avalanche tested technology, this MOSFET can withstand high voltages and ... 2025-02-08 13:29:27
...High Voltage MOSFET TO-220AB AC To DC Power Supply Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF... 2025-02-08 13:29:45
...High Voltage Mosfet Low ON Resistance Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. ... 2025-02-08 13:29:46
2A650V CS2N65A5 High Voltage Mosfet Surface Amount Power Supply Units Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) ... 2025-02-08 13:29:32
...Power Supply Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. Typ MAX Typ Typ ... 2025-02-08 13:29:41
8A500V CS8N50A2 TO-220F High Voltage MOSFET For Power Switch Circuit Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) ... 2025-02-08 13:29:43
...Channel To-220F For Power Supply N-channel Super Junction MOSFET Part No.:LCS65R600F Package:TO-220F MAIN CHARACTERISTICS ID:7A VDSS:650V RDSON-typ ... 2025-07-11 00:37:58
High Voltage MOSFET For High Speed Switching Power Loss Reduction Photovoltaic *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, ... 2025-07-11 00:37:58
... performance with low power loss. This means that the device consumes less power, and is highly efficient in delivering power across various ... 2025-04-01 14:35:06
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