China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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multipurpose power mosfet transistor

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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multipurpose power mosfet transistor

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...MAX Typ Typ CS10N60A2 TO-220F N 10 600 ±30 2 4 660 900 32 1609 Product Description: This MOSFET can handle high voltage and is an ideal component ... 2025-02-08 13:29:45
...Power Transistor IGBT For High-Power Electronic Controls Product Description: The High-Power IGBT is packaged in a TO-247 package type, which is ... 2025-07-10 00:29:15
N Channel High Voltage MOSFET Cool Mos For Power Switch Circuit Of Adaptor And Charger *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-10 00:29:15
Power Faster Switching Speed Isolated Gate Bipolar Transistor For Power Supply Units *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-10 00:29:15
... power loss when the semiconductor is switched on and off. It also makes it ideal for use in high-frequency applications, such as renewable energy ... 2025-07-10 00:29:15
... in high voltage and high power applications. With a wide range of voltage rating from 650V to 1200V, this device is capable of delivering ... 2025-07-10 00:29:15
Multiscene Insulated Gate Bipolar Transistor Inverter For Uninterruptible Power Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-10 00:29:15
Third Generation Semiconductor Silicon Carbide MOSFET For Consumer Electronics *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, ... 2025-07-10 00:29:15
...Power Semiconductor For Industrial Power Supplies N-channel Super Junction MOSFET Part No.:LC60R190D Package:TO-220F MAIN CHARACTERISTICS ID:19A ... 2025-07-10 00:29:15
...Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190F Package:TO-220F MAIN CHARACTERISTICS ID:20A VDSS:650V RDSON-typ VGS=10V:150mΩ ... 2025-07-10 00:29:15
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