China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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multipurpose power mosfet transistor

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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multipurpose power mosfet transistor

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...MOSFET With Low Gate Charge TO-220F Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min... 2025-02-08 13:29:29
... LT15N10AD TO-252 1 N 15 100 ±20 1 2.5 88 110 95 140 - - Product Description: With its low Rds(ON) resistance and low power loss, this MOSFET is ... 2025-04-01 14:35:03
LT40P04AD Low Voltage MOSFET TO-252 Package P Channel For PWM Application Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) ... 2025-04-26 19:31:38
... Typ Typ LT50N06AP TO-220C 1 N 50 60 ±20 1 2.5 12 17 16 25 Product Description: In addition to its low power consumption, the Low Voltage MOSFET is ... 2025-04-01 14:35:05
LC65R600D Super Junction MOSFET with Large EMI Margin and 100% Avalanche Tested Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) ... 2025-02-08 13:28:40
...MOSFET With TO-263 Package Low Power Loss Low Rds(ON) Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON) 4... 2025-02-08 13:29:15
30V Low Voltage MOSFET Vital Components In DC-DC Converters And Regulators Product Description: One of the key features of this MOSFET is its low ... 2025-07-10 00:29:15
... power loss and high efficiency. The device's package type is TO-247, which is a popular package type in the electronics industry. Its TO-247 ... 2025-07-10 00:29:15
Excellent Gate Charge N Channel Super Junction MOSFET 4A650V LCS65R900 High Power Semiconductor Id:4A Vdss:650V Rdson-typ(@Vgs=10V):840mΩ Features: • ... 2025-07-10 00:29:15
High Voltage MOSFET For High Speed Switching Power Loss Reduction Photovoltaic *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, ... 2025-07-10 00:29:15
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