China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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multipurpose high power mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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multipurpose high power mosfet

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...High Current Capability SBT40L45PT TO-247 Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR VF(125℃) @IF IR (125℃ IFSM (A) Tj (℃) Min ... 2025-07-28 00:25:40
... 150 Product Description: The Low VF Schottky diode features a low forward voltage drop, making it ideal for use in power supply units, motor ... 2025-07-28 00:25:40
...High Reverse Saturation Current Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Tj (℃) If (A) Typ (V) Max (V) Typ (uA... 2025-07-28 00:25:40
... 20 50 3 0.28 11 180 150 Product Description: This product's fast switching capability allows for faster and more efficient power management, 2025-02-08 13:31:38
Power Frequency Solution Silicon Carbide Schottky Barrier Diodes For Industrial Fan *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html... 2025-07-28 00:25:39
*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;... 2025-07-28 00:25:39
...MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=10V:274mΩ FEATURES • Low gate charge • Low RDS(on) ... 2025-07-28 00:25:39
...tem efficiency. The PDFN5*6,TO-252 and TO-220C package options provide flexibility for designers and engineers to choose the best fit for their ... 2025-07-28 00:25:40
...free, meeting RoHS standards for environmentally friendly manufacturing. This ensures that our MOSFET is not only good for your system but also ... 2025-07-28 00:25:40
...High Power Semiconductor is particularly useful in charging pile applications for electric vehicles, where high voltage power IGBT is required for ... 2025-07-28 00:25:40
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