311 - 320 of 369
multipurpose high power mosfet
Selling leads
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...High efficiency Low VF Schottky Diodes For Power Supplies Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR VF(125℃) @IF IR (125℃ ...
2025-07-28 00:25:40
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... 45 15 - 0.70 10.0 50 - - - 200 150 Product Description: One of the key benefits of these Schottky Barrier Diodes is their low power losses. This ...
2025-02-08 13:30:05
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... 4.0 20 - - - 150 150 Product Description: The MBR2060FCT Schottky Barrier Diodes come in a TO-220F package, which is a popular package type for ...
2025-02-08 13:30:15
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... 200 20 0.84 0.90 2.0 10 7 - - 450 150 Product Description: Our Schottky Barrier Diodes are a cost-effective solution for your power management ...
2025-02-08 13:30:17
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...power Losses Fast Recovery Diodes For High Frequency Inverters MUR1620FCT Part Number Package Die Io (A) VBR @IR VF(25℃) IR(25℃) VF(125℃) IR (125℃ ...
2025-02-08 13:31:00
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... • Low VCE(sat) • Reliable and Rugged APPLICATIONS • UPS • Motor drives • Boost • Portable power station Q1.Who are we? A:We are based in Guangdong...
2025-07-28 00:25:40
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...Power Transistor And Inverter IGBT High Voltage 1200V 40A Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable ...
2025-07-28 00:25:39
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650V IGBT Power Semiconductor with High Input Impedance in TO-247 Package Product Description: The Inverter IGBT has a Collector-Emitter Voltage ...
2025-07-28 00:25:39
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... TO-252 1 10 200 5 0.85 0.92 0.6 5 2 - - 130 150 Product Description: Our Schottky Barrier Diodes are also cost-effective, providing a high-quality ...
2025-07-28 00:25:40
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...Power IGBT For Boost MAIN CHARACTERISTICS Ic @TC=100℃ 60A VCE 650V VCE(sat)-typ 1.7V FEATURES • Positive temperature coefficient • Fast Switching • ...
2025-07-28 00:25:40
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