China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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low frequency power igbt

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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low frequency power igbt

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...Power Supply Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. Typ MAX Typ Typ ... 2025-02-08 13:29:41
...Typ MAX Typ Typ CS8N50A2 TO-220F N 8 500 ±30 2 4 680 800 Product Description: One of the major highlights of this MOSFET is its low ON resistance, ... 2025-02-08 13:29:43
... 800 Product Description: The model number for this MOSFET is CS9N50A2, and it boasts a number of impressive features that make it a top choice for ... 2025-02-08 13:29:44
10A45V MBR1045FCT Schottky Barrier Diodes TO-220F For Power Supply Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Tj (℃... 2025-02-08 13:30:16
Iniaturization And Higher Efficiency 11A 650V 350mΩ Super Junction MOSFET N-channel Super Junction MOSFET Part No.:LCS65R380F Package:TO-220F MAIN ... 2025-07-28 00:25:39
... in high voltage and high power applications. With a wide range of voltage rating from 650V to 1200V, this device is capable of delivering ... 2025-07-28 00:25:39
... • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIO... 2025-07-28 00:25:39
...Power Mosfet For Hard Switching Resonant Switching PWM Stages Features • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse ... 2025-07-28 00:25:39
...FEATURES • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • Power switch circuit of ... 2025-07-28 00:25:39
...Power Mos N-channel Super Junction MOSFET Part No.:LC65R900D Package:TO-252 MAIN CHARACTERISTICS ID:5A VDSS:650V RDSON-typ VGS=10V:780mΩ FEATURES ... 2025-07-28 00:25:39
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