China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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low frequency power igbt

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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low frequency power igbt

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Low Power Consumption SMPS Super Junction MOSFET For High Power Application Product Description: One of the key features of this MOSFET is its very ... 2025-07-28 00:25:39
...Power Supply N-channel Super Junction MOSFET Part No.:LC65R075F Package:TO-220F MAIN CHARACTERISTICS ID:47A VDSS:600V RDSON-typ VGS=10V:68mΩ ... 2025-07-28 00:25:39
...Low ON Resistance For Adapter CS12N65A2 TO-220F Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) ... 2025-02-08 13:29:40
...RoHS compliant TYPICAL APPLICATIONS · Solar inverter · Power factor correction · Data Center · Switch mode power supply Benefits · High-speed ... 2025-07-28 00:25:39
Low VF Forward Voltage Schottky Barrier Diodes For Power Management Product Description: Our Schottky Barrier Diodes come in a variety of packages ... 2025-07-28 00:25:39
...Low Forward Voltage TO-263 Miniature Switched Mode Power Supplies Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Tj ... 2025-07-28 00:25:40
... 1 10 45 5 0.54 0.60 3.0 30 100 150 Product Description: One of the main advantages of the MBR Schottky Barrier Diodes is their low forward voltage ... 2025-02-08 13:30:01
... TO-220F 1 40 60 20 0.70 0.76 24.0 80 5 - - 250 150 Product Description: One of the key features of this diode is its low VF, which makes it ideal ... 2025-07-28 00:25:40
...Power Supply Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. Typ MAX Typ Typ ... 2025-02-08 13:29:41
... Typ CS4N65A2 TO-220F N 4 650 ±30 2 4 2220 2570 Product Description: One of the key features of this MOSFET is its low ON resistance, which ensures ... 2025-02-08 13:29:46
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