China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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led drivers high power mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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led drivers high power mosfet

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... and lower power dissipation. This means that your devices will run more efficiently, saving you energy and reducing the risk of overheating or ... 2025-07-28 00:25:40
... APPLICATIONS • Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC-DC Power Supply Support and Services: Silicon Carbide MOSFET ... 2025-07-28 00:25:39
...High Power MOSFET High Efficiency And Performance Applications: This product is manufactured in China by LX, a trusted name in the electronics ... 2025-07-28 00:25:39
...high-quality semiconductor devices, this MOSFET is brand new and unused, ensuring reliable and consistent performance. Designed and tested to meet ... 2025-07-28 00:25:39
...High Power Mosfet For Hard Switching Resonant Switching PWM Stages Features • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single ... 2025-07-28 00:25:39
...Power MOSFET For Standby Power N-Channel Enhancement Mode Power MOSFET Part No.:CS4N50A Package:TO-220F/TO-252/TO-251 MAIN CHARACTERISTICS ID:4A ... 2025-07-28 00:25:39
... EFFICIENCY SWITCH • Motor driven • Ammeter • UPS power Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national ... 2025-07-28 00:25:39
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-28 00:25:39
... ruggedness APPLICATIONS • Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC-DC Power Supply Support and Services: Silicon ... 2025-07-28 00:25:39
N-Channel Enhancement Mode Power MOSFET 11A 400V For Adaptor And Charger MAIN CHARACTERISTICS ID:11A VDSS:400V RDSON-typ (@VGS=10V):0.5Ω FEATURES Fast ... 2025-07-28 00:25:39
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