China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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led drivers high power mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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led drivers high power mosfet

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High Breakdown Voltage Silicon Carbide MOSFET For Power Inverters *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: ... 2025-07-28 00:25:39
Iniaturization And Higher Efficiency 11A 650V 350mΩ Super Junction MOSFET N-channel Super Junction MOSFET Part No.:LCS65R380F Package:TO-220F MAIN ... 2025-07-28 00:25:39
... reduce energy consumption and save costs in the long run. Another advantage of this product is its thermal robustness, which ensures reliable and ... 2025-07-28 00:25:40
... • Low collector to emitter saturation voltage • Easy parallel switching capability • Short circuit withstands time 10μs • High ruggedness ... 2025-07-28 00:25:39
*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;... 2025-07-28 00:25:39
... voltage • Short circuit withstands time 10μs • High ruggedness performance • Easy parallel switching capability APPLICATIONS • Inverter TO-247 • ... 2025-07-28 00:25:40
... 20 50 3 0.28 11 180 150 Product Description: This product's fast switching capability allows for faster and more efficient power management, 2025-02-08 13:31:38
...MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=10V:274mΩ FEATURES • Low gate charge • Low RDS(on) ... 2025-07-28 00:25:39
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