China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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hv mosfet switching circuit

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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hv mosfet switching circuit

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...Switching High Power Semiconductor For DC-DC Converters N-channel Super Junction MOSFET Part No.:LC65R280D Package:TO-252 MAIN CHARACTERISTICS ID... 2025-07-11 00:37:58
...Switching For General Inverter N-Channel Enhancement Mode Power IGBT LGT25N120SB FEATURES • Trench and field-stop technology • High speed switching ... 2025-07-11 00:37:58
... voltage • Short circuit withstands time 10μs • High ruggedness performance • Easy parallel switching capability APPLICATIONS • Inverter TO-247 • ... 2025-07-11 00:37:58
... 0.88 1.5 10 5 - - 350 150 Product Description: These Schottky diodes are designed to provide excellent performance and reliability in a variety of ... 2025-02-08 13:30:11
MUR1560 The High Speed Switching Capability of Express and Ultrafast Recovery Diodes for High Frequency Circuits Part Number Package Die Io (A) VBR ... 2025-02-08 13:31:06
...MOSFET Part No.:CS5N50A5 Package:TO-252 MAIN CHARACTERISTICS ID:5A VDSS:500V RDSON-typ VGS=10V: 1.33Ω FEATURES • Fast Switching • Low ON Resistance ... 2025-07-11 00:37:58
...MOSFET Part No.:LC65R600F Package:TO-220F MAIN CHARACTERISTICS ID:7A VDSS:650V RDSON-typ VGS=10V:520mΩ FEATURES Adopt advanced trench technology to ... 2025-07-11 00:37:58
...MOSFET For AC-DC Power Supply N-channel Super Junction MOSFET Part No.:LC60R600D Package:TO-252 MAIN CHARACTERISTICS ID:7A VDSS:600V RDSON-typ VGS... 2025-07-11 00:37:58
Multifunctional Low Voltage MOSFET for Power Management Features • Positive temperature coefficient • High speed switching • Low collector to emitter ... 2025-07-11 00:37:58
... gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS • ... 2025-07-11 00:37:58
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