China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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hv mosfet switching circuit

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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hv mosfet switching circuit

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Multifunctional Low Voltage MOSFET for Power Management Features • Advanced Trench Technology • Excellent RDS(ON) and Low Gate Charge APPLICATIONS • ... 2025-07-11 00:37:58
...MAX Typ Typ CS10N60A2 TO-220F N 10 600 ±30 2 4 660 900 32 1609 Product Description: This MOSFET can handle high voltage and is an ideal component ... 2025-02-08 13:29:45
...Trench Technology Enhancement Mode Power Mosfet N Channel For Power Management Id:80A Vdss:30V Rdson-typ(@Vgs=10V):3.82mΩ Features: Advanced Trench ... 2025-07-11 00:37:58
...MOSFET For Switching Charger N-channel Super Junction MOSFET Part No.:LC65R380D Package:TO-252 MAIN CHARACTERISTICS ID:11A VDSS:650V RDSON-typ VGS... 2025-07-11 00:37:58
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*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;... 2025-07-11 00:37:58
*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;... 2025-07-11 00:37:58
*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;... 2025-07-11 00:37:58
...Switching Speed For Automotive Electronics Product Description: Our High Power IGBT product is a combination of the best qualities of Metal-Oxide... 2025-07-11 00:37:58
... Cool MOS For Switched Mode Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190F Package:TO-220F MAIN CHARACTERISTICS ID:20A VDSS:650V ... 2025-07-11 00:37:58
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