China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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high speed switching capability diodes

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high speed switching capability diodes

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High Speed Switching Capability Fast Recovery Diodes For Respectively MUR1220FCT Part Number Package Die Io (A) VBR @IR VF(25℃) IR(25℃) VF(125℃) IR ... 2025-02-08 13:31:07
650V Fast Recovery Diode Power Control High Speed Switching Capability *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-11 00:37:58
...) MUR6060PT TO-247 2 60 600 30 1.35 1.60 0.03 1 - - - 420 50 150 Product Description: Fast Recovery Diodes are designed to provide high efficiency, ... 2025-02-08 13:30:57
...High speed switching FRD Fast Recovery Diodes TO-220AB Part Number Package Die Io (A) VBR @IR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Trr Tj (℃) ... 2025-07-11 00:37:59
...High Power IGBT High Speed Switching For General Inverter N-Channel Enhancement Mode Power IGBT LGT25N120SB FEATURES • Trench and field-stop ... 2025-07-11 00:37:58
High Voltage MOSFET For High Speed Switching Power Loss Reduction Photovoltaic *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, ... 2025-07-11 00:37:58
High Speed Switching High Voltage MOSFET For Uninterruptible Power Supply *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-11 00:37:58
... TO-220AC 1 15 600 15 1.25 1.60 0.02 1 - - - 250 50 150 Product Description: The MUR1560 Fast Recovery Diodes feature a low forward voltage and 2025-02-08 13:31:06
... • Low collector to emitter saturation voltage • Easy parallel switching capability • Short circuit withstands time 10μs • High ruggedness ... 2025-07-11 00:37:58
... (mA) MBR20150CS TO-252 1 20 150 10 0.83 0.90 1.1 10 3 - - 290 150 Product Description: The Schottky Barrier Diodes are commonly used in a variety ... 2025-07-11 00:37:58
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