China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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high speed switching capability diodes

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high speed switching capability diodes

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... capability APPLICATIONS • Energy storage • Solar string inverter • Uninterruptible power supplies Q1.Who are we? A:We are based in Guangdong, ... 2025-07-11 00:37:58
... 15 0.64 0.73 11 50 - - - 220 150 Product Description: One of the key features of the Low VF Schottky product is its high surge capability. This ... 2025-07-11 00:37:59
...) MUR3060CT TO-220AB 2 30 600 15 1.20 1.60 0.02 1 - - - 250 50 150 Product Description: The Fast Recovery Diodes are capable of operating in a wide ... 2025-07-11 00:37:59
...Diodes For Frequency Multipliers Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR VF(125℃) @IF IR (125℃ IFSM (A) Tj (℃) Min (V) IF ... 2025-07-11 00:37:59
...High Power IGBT With Fast Switching Speed For Automotive Electronics Product Description: Our High Power IGBT product is a combination of the best ... 2025-07-11 00:37:58
... MAX Typ Typ CS5N60A2 TO-220F N 5 600 ±30 2 4 1800 2300 17.6 618 Product Description: One of the key features of our High Voltage MOSFET is its Low ... 2025-02-08 13:29:43
...Switched Mode Power Supplies Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Tj (℃) Min (V) If (A) Typ (V) Max (V) ... 2025-07-11 00:37:58
...High efficiency Low VF Schottky Diodes For Power Supplies Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR VF(125℃) @IF IR (125℃ ... 2025-07-11 00:37:59
...Switching High Power Semiconductor For Industrial Power Supplies N-channel Super Junction MOSFET Part No.:LC60R190D Package:TO-220F MAIN CHARACTERI... 2025-07-11 00:37:58
2A650V CS2N65A4 High Switching Speed Mosfet For Fast and Stable Switching Performance Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) ... 2025-02-08 13:29:38
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