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high power semiconductor n channel
Selling leads
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... EFFICIENCY SWITCH • Motor driven • Ammeter • UPS power Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national ...
2025-07-11 00:37:58
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...Power IGBT 650V-1200V Energy Saving For Switching Switch Product Description: The High Power IGBT is a reliable and efficient semiconductor device ...
2025-07-11 00:37:58
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...Power IGBT High Current Capacity N-Channel Enhancement Mode Power IGBT LGT25N120B FEATURES • Trench and field-stop technology • High speed ...
2025-07-11 00:37:58
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4A 500V 2.1Ω N-Channel Enhancement Mode Power MOSFET For Standby Power N-Channel Enhancement Mode Power MOSFET Part No.:CS4N50A Package:TO-220F/TO-252...
2025-07-11 00:37:58
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...High Frequency N Channel Enhancement Mode Power IGBT For PFC MAIN CHARACTERISTICS Ic(A):40A Vces(V):650V VGES(V):±20 TRR(nS):33nS FEATURES • Trench ...
2025-07-11 00:37:58
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7A 650V 525mΩ TO-220F Cool MOS For Uninterruptible Power Supply N-channel Super Junction MOSFET Part No.:LC65R600F Package:TO-220F MAIN CHARACTERISTIC...
2025-07-11 00:37:58
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Semiconductor Device Ultra High Voltage IGBT With High Input Impedance *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ...
2025-07-11 00:37:58
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5A 650V 780mΩ N Channel Super Junction MOSFET For Solar Inverters N-channel Super Junction MOSFET Part No.:LC65R900F Package:TO-220F MAIN CHARACTERIST...
2025-07-11 00:37:58
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...Positive VCE (sat) temperature coefficient • High efficiency for motor control • Excellent current sharing in parallel operation • RoHS compliant ...
2025-07-11 00:37:58
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N-Channel Enhancement Mode Power MOSFET 11A 400V For Adaptor And Charger MAIN CHARACTERISTICS ID:11A VDSS:400V RDSON-typ (@VGS=10V):0.5Ω FEATURES Fast ...
2025-07-11 00:37:58
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