China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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high power semiconductor n channel

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power semiconductor n channel

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... performance with low power loss. This means that the device consumes less power, and is highly efficient in delivering power across various ... 2025-04-01 14:35:06
...High Voltage MOSFET With Low Gate Charge TO-220F Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) ... 2025-02-08 13:29:29
... TO-251 N 2 650 ±30 3 4 4000 4500 11 295 Product Description: One of the standout features of this MOSFET is its low ON resistance, which ensures ... 2025-02-08 13:29:38
... Typ Typ CS10N60A2 TO-220F N 10 600 ±30 2 4 660 900 32 1609 Product Description: This MOSFET can handle high voltage and is an ideal component for ... 2025-02-08 13:29:45
50A200V N Channel Enhancement MOSFET Low Power Loss Silicon MOSFET Transistor With Low Rds(ON) Part Number Package Die Channel ID (A) VDSS (V) VGSS (V... 2025-04-01 14:35:10
...High Current Cool Mos N-channel Super Junction MOSFET Part No.:LC65R075B Package:TO-247 MAIN CHARACTERISTICS ID:47A VDSS:600V RDSON-typ VGS=10V:68m... 2025-07-11 00:37:58
LC65R600D Super Junction MOSFET with Large EMI Margin and 100% Avalanche Tested Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) ... 2025-02-08 13:28:40
Iniaturization And Higher Efficiency 11A 650V 350mΩ Super Junction MOSFET N-channel Super Junction MOSFET Part No.:LCS65R380F Package:TO-220F MAIN ... 2025-07-11 00:37:58
...High Power Semiconductor is particularly useful in charging pile applications for electric vehicles, where high voltage power IGBT is required for ... 2025-07-11 00:37:58
...power station • Energy storage • Solar string inverter • Uninterruptible power supplies Q1.Who are we? A:We are based in Guangdong, China,factory ... 2025-07-11 00:37:58
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